NTS4101PT1G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTS4101PT1G
Datasheet:
Description:
MOSFETs SOT-323-3 SMD/SMT P-Channel number of channels:1 329 mW -20 V Continuous Drain Current (ID):1.37 A 6.4 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -20 V |
| Length | 2.2 mm |
| Width | 1.35 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 83 MΩ |
| Height | 900 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -1.37 A |
| Max Power Dissipation | 329 mW |
| Power Dissipation | 329 mW |
| Threshold Voltage | -640 mV |
| Number of Channels | 1 |
| Input capacitance | 840 pF |
| Continuous Drain Current (ID) | 1.37 A |
| Rds On Max | 120 mΩ |
| Drain to Source Voltage (Vdss) | -20 V |
| Turn-On Delay Time | 6.2 ns |
| Turn-Off Delay Time | 26 ns |
| Element Configuration | Single |
| Fall Time | 14.9 ns |
| Rise Time | 14.9 ns |
| Gate Charge | 6.4 nC |
| Drain to Source Resistance | 104 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 1.5 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 1968
Distributors
pcbx
pcbxUnit Price$0.09869
Ext.Price$0.09869
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.09869 | $0.09869 |
| 10 | $0.08830 | $0.88300 |
| 50 | $0.07901 | $3.95050 |
| 100 | $0.07020 | $7.02000 |
| 500 | $0.06237 | $31.18500 |
| 1000 | $0.05959 | $59.59000 |
| 3000 | $0.05694 | $170.82000 |
| 5000 | $0.05400 | $270.00000 |